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May 1995
BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features
0.22 A, 50V. RDS(ON) = 3.5 @ VGS = 10V. High density cell design for extremely low RDS(ON). Rugged and Relaible Compact industry standard SOT-23 surface mount package.
_______________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol VDSS VDGR VGSS Parameter Drain-Source Voltage
T A = 25C unless otherwise noted
BSS138 50 50 20 40 0.22 0.88 0.36 2.8 -55 to 150 300
Units V V V
Drain-Gate Voltage (RGS < 20K) Gate-Source Voltage - Continuous - Non Repetitive (TP < 50 S)
ID PD TJ,TSTG TL
Drain Current - Continuous - Pulsed Maximum Power Dissipation Derate Above 25C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds
A
W mW/C C C
THERMAL CHARACTERISTICS RJA Thermal Resistance, Junction to Ambient 350 C/W
(c) 1997 Fairchild Semiconductor Corporation
BSS138 Rev. A1
Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 A VDS = 50 V, VGS = 0 V TJ =125C VDS = 30 V, VGS = 0 V IGSSF IGSSR VGS(th) RDS(ON) gFS Ciss Coss Crss tD(on) tr tD(off) tf IS ISM VSD Gate - Body Leakage, Forward Gate - Body Leakage, Reverse
(Note 1)
50 0.5 5 100 100 -100
V A A nA nA nA
VGS = 20 V, VDS = 0 V VGS = -20 V, VDS= 0 V VDS = VGS, ID = 1 mA VGS = 10 V, ID = 0.22 A VGS = 4.5 V, ID = 0.22 A VDS = 10 V, ID = 0.22 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz 0.12 0.8 1.3 0.81 1.16 0.45
ON CHARACTERISTICS
Gate Threshold Voltage Static Drain-Source On-Resistance
1.6 3.5 6
V
S
Forward Transconductance
DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance 30 15 7.5 60 25 10 pF pF pF
SWITCHING CHARACTERISTICS (Note 1) Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time VDD = 30 V, ID = 0.29 A, VGS = 10 V, RGEN = 50 8 12 16 22 ns ns ns ns
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Source Current Maximum Pulse Source Current (Note 1) Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.44 A 0.8 0.22 0.88 1.4 A A V
Note: 1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.
BSS138 Rev. A1
Typical Electrical Characteristics
3 I D , DRAIN-SOURCE CURRENT (A)
RDS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE
2.5
VGS = 10V
2.5
V
2
GS
= 3.0V 3.5 4.0 4.5
6.0
2 1.5 1 0.5 0
5.0 4.5 4.0 3.5 3.0 2.5
0 1 2 3 4 VDS , DRAIN-SOURCE VOLTAGE (V) 5
1.5
5.0 6.0
1
10
0 0.5 1 I D , DRAIN CURRENT (A) 1.5 2
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate Voltage and Drain Current.
2
R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
2.5 DRAIN-SOURCE ON-RESISTANCE
1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50
I D = 220mA
V GS = 10V
R DS(on) , NORMALIZED
TJ = 125C
2
V GS = 10V
1.5
25C
1
-55C
0.5
-25
0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C)
125
150
0
5
10 15 20 I D , DRAIN CURRENT (A)
25
30
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On-Resistance Variation with Drain Current and Temperature.
0.6
V th , NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE (V)
1.2
VDS = 10V
0.5 I D , DRAIN CURRENT (A) 0.4 0.3 0.2 0.1 0 0.5
T = 25C J
VDS = V GS
1.1
125C
I D = 250A
1
0.9
0.8
1
1.5 2 2.5 3 V GS, GATE TO SOURCE VOLTAGE (V)
3.5
4
0.7 -50
-25
0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C)
125
150
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation with Temperature.
BSS138 Rev. A1
Typical Electrical Characteristics (continued)
BVDSS , NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE (V)
1.12 1.1 1.08 1.06 1.04 1.02 1 0.98 0.96 -50 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C) 125 150
1 I S , REVERSE DRAIN CURRENT (A)
ID = 250A
V GS = 0V
0.1
TJ = 125C 25C
0.01
0.001 0.2
0.4 0.6 0.8 1 V SD , BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 7. Breakdown Voltage Variation with Temperature.
Figure 8. Body Diode Forward Voltage Variation with Current and Temperature
100
10
VGS , GATE-SOURCE VOLTAGE (V)
I D = 220mA
8
V
DS
= 8.0V
50 CAPACITANCE (pF)
C iss C oss
6
20
4
10
f = 1 MHz VGS = 0V
C rss
2
5 0.1
0.2
1 2 5 10 20 V DS , DRAIN TO SOURCE VOLTAGE (V)
0.5
50
0
0
0.2
0.4
0.6 0.8 1 Q g , GATE CHARGE (nC)
1.2
1.4
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
VDD
t d (o n )
t on
t off tr
90%
t d(off)
90%
V IN
D
RL V OUT
VO U T
10%
tf
VGS
R GEN
10%
INVERTED
G
DUT 90% S
V IN
10%
50%
50%
PULSE W IDTH
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
BSS138 Rev. A1
Typical Electrical Characteristics (continued)
g FS, TRANSCONDUCTANCE (SIEMENS)
0.8
2
TJ = 25C 125C
0.4
I D , DRAIN CURRENT (A)
1 0.5
R ( DS ) ON
Lim
it
10 1m 10 ms s
0u
s
0.6
0.2 0.1 0.05
10 1s 10 s DC
0m
s
VGS = 20V SINGLE PULSE
0.01 0.005
0.2
VDS = 10V
0 0 0.3 0.6 0.9 ID , DRAIN CURRENT (A) 1.2 1.5
TA = 25C
1 V
DS
5
10
20
50
100
, DRAIN-SOURCE VOLTAGE (V)
Figure 13. Transconductance Variation with Drain Current and Temperature.
Figure 14. Maximum Safe Operating Area
1 TRANSIENT THERMAL RESISTANCE 0.5 0.2 0.1 0.05
D = 0.5 0.2 0.1 0.05 0.02 0.01 P(pk)
r(t), NORMALIZED EFFECTIVE
R JA (t) = r(t) * R JA o R = 350 C/W JA
0.01
Single Pulse
t1
t2
TJ - T A = P * R JA (t)
0.002 0.001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10
Duty Cycle, D = t1 /t2
100
300
Figure 15. Transient Thermal Response Curve
BSS138 Rev. A1

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